Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

• Main Authors: Chen, Weifeng, He, Yan, Sun, Changqing, Ouyang, Gang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Continuum mechanics; Si nanowire
• Online Access: https://hdl.handle.net/10356/82644; http://hdl.handle.net/10220/40263
• Institution: Nanyang Technological University

The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interfacebond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core c...