Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires
The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interfacebond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core c...
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Main Authors: | Chen, Weifeng, He, Yan, Sun, Changqing, Ouyang, Gang |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2016
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/82644 http://hdl.handle.net/10220/40263 |
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Institution: | Nanyang Technological University |
Language: | English |
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