Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interfacebond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core c...

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Bibliographic Details
Main Authors: Chen, Weifeng, He, Yan, Sun, Changqing, Ouyang, Gang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/82644
http://hdl.handle.net/10220/40263
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Institution: Nanyang Technological University
Language: English

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