Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

• المؤلفون الرئيسيون: Chen, Weifeng, He, Yan, Sun, Changqing, Ouyang, Gang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Continuum mechanics; Si nanowire
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82644; http://hdl.handle.net/10220/40263

The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interfacebond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core c...