Interfacial chemistry study of GaN by trimethylaluminum-only cycles and X-ray photoelectron spectroscopy

• المؤلفون الرئيسيون: Ang, Diing Shenp, Gu, C. J., Duan, T. L., Pan, J. S.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: GaN; Interfacial Chemistry; Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82729; http://hdl.handle.net/10220/49084

The interfacial chemistry of n-type Ga-face GaN during atomic layer deposition of Al2O3 is studied by preceding the deposition process with several trimethylaluminum(TMA)-only cycles to clarify the impact of this precursor on the Al2O3/GaN interface. X-ray photoelectron spectroscopy analysis shows t...