Layer Engineering of 2D Semiconductor Junctions

• Main Authors: Li, Bo, Xie, Erqing, He, Yongmin, Sobhani, Ali, Lei, Sidong, Zhang, Zhuhua, Gong, Yongji, Jin, Zehua, Zhou, Wu, Yang, Yingchao, Zhang, Yuan, Wang, Xifan, Yakobson, Boris, Vajtai, Robert, Halas, Naomi J., Ajayan, Pulickel
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Layer engineering; 2D semiconductor junctions
• Online Access: https://hdl.handle.net/10356/83368; http://hdl.handle.net/10220/42579
• Institution: Nanyang Technological University

A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p–n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.