Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices

10.6113/JPE.2012.12.1.19

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Bibliographic Details
Main Authors: Wei, G., Liang, Y.C., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57198
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Institution: National University of Singapore