Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices

10.6113/JPE.2012.12.1.19

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Bibliographic Details
Main Authors:	Wei, G., Liang, Y.C., Samudra, G.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57198
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57198
record_format	dspace
spelling	sg-nus-scholar.10635-571982023-10-31T20:16:18Z Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices Wei, G. Liang, Y.C. Samudra, G.S. ELECTRICAL & COMPUTER ENGINEERING High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor 10.6113/JPE.2012.12.1.19 Journal of Power Electronics 12 1 19-23 2014-06-17T03:03:26Z 2014-06-17T03:03:26Z 2012-01 Article Wei, G., Liang, Y.C., Samudra, G.S. (2012-01). Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices. Journal of Power Electronics 12 (1) : 19-23. ScholarBank@NUS Repository. https://doi.org/10.6113/JPE.2012.12.1.19 15982092 http://scholarbank.nus.edu.sg/handle/10635/57198 000303028000003 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor
spellingShingle	High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor Wei, G. Liang, Y.C. Samudra, G.S. Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
description	10.6113/JPE.2012.12.1.19
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wei, G. Liang, Y.C. Samudra, G.S.
format	Article
author	Wei, G. Liang, Y.C. Samudra, G.S.
author_sort	Wei, G.
title	Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
title_short	Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
title_full	Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
title_fullStr	Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
title_full_unstemmed	Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
title_sort	realistic simulations on reverse junction characteristics of sic and gan power semiconductor devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57198
_version_	1781781364604928000

Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices

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