Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices

Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices

10.6113/JPE.2012.12.1.19

Saved in:

Bibliographic Details
Main Authors:	Wei, G., Liang, Y.C., Samudra, G.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	High voltage p-n junction SiC/GaN diode simulation WBG power semiconductor
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57198
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices
by: Wei, G., et al.
Published: (2014)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture
by: Zhang, Yiping, et al.
Published: (2021)

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
by: Huang, H., et al.
Published: (2014)

GaN-based semiconductor saturable absorber mirror operating around 415 nm
by: Xiang, N., et al.
Published: (2014)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
by: Yin, W.-Y., et al.
Published: (2014)

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures
by: Huang, H., et al.
Published: (2014)

Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes
by: Mondal, Ramit Kumar, et al.
Published: (2024)

Realistic simulation of forward and reverse characteristics of 4H-SiC pn junction diode
by: WEI GUANNAN
Published: (2011)

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
by: Wang, Y.-H., et al.
Published: (2014)

Study on InGaN/GaN quantum structures and their applications in semiconductor saturable absorber mirror
by: LIN FEN
Published: (2010)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
by: Ahmed Salah Hawash Razeen
Published: (2024)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
by: Huang, H., et al.
Published: (2014)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
by: Ranjan, Kumud, et al.
Published: (2020)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
by: Gao, Yu, et al.
Published: (2019)

Investigation of optical properties of nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2014)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
by: Wang, H.T., et al.
Published: (2014)

Photoreflectance study of band-gap renormalization in Si-doped GaN
by: Zhang, X., et al.
Published: (2014)

Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
by: LIU XINKE
Published: (2013)

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
by: Tian, F., et al.
Published: (2014)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
by: Sasangka, W. A., et al.
Published: (2017)

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
by: Pu, Yuhan, et al.
Published: (2023)

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
by: Feng, Z.C., et al.
Published: (2014)

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
by: Huo, Lili, et al.
Published: (2023)

Telecom single-photon emitters in GaN operating at room temperature: Embedment into bullseye antennas
by: Meunier, Max, et al.
Published: (2023)

Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors
by: Tian, Y., et al.
Published: (2014)

Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
by: Yong, A.M., et al.
Published: (2014)

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
by: Tan, H. T., et al.
Published: (2024)

Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method
by: Sang, N.X., et al.
Published: (2014)

MOCVD growth and characterization of wide band gap group III-nitride semiconductors
by: LI PENG
Published: (2010)

GROWTH AND SIMULATION STUDY OF GAN ON V-GROOVE PATTERNED SILICON (100) SUBSTRATES AND ITS APPLICATIONS
by: LI SHIJU
Published: (2017)

Identification of deep levels in π-GaN epilayers
by: Soh, C.B., et al.
Published: (2014)

Fabrication and characterization of AIGaN/GaN HEMTs
by: HOY KIN MENG, DERRICK
Published: (2010)

A dual-character InGaN/GaN multiple quantum well device for electroluminescence and photovoltaic absorption of near-mutually exclusive wavelengths
by: Ho, J.-W., et al.
Published: (2014)

Ion channeling studies of defect formation in GaN and related materials
by: MUKHTAR AHMED RANA
Published: (2011)

GaN HEMTs device modeling in high-power and high-frequency applications
by: Zhang, Juncheng
Published: (2025)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
by: Liu, Siyu, et al.
Published: (2024)

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
by: Feng, Z.C., et al.
Published: (2014)

STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES
by: LWIN MIN KYAW
Published: (2015)