Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step
Silicon-germanium (Si1-xGex) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap. In previous work, we have demonstrated the abi...
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Main Authors: | , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2016
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/83420 http://hdl.handle.net/10220/41429 |
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Institution: | Nanyang Technological University |
Language: | English |
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