A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

• المؤلفون الرئيسيون: Li, Hua Kai, Chen, Tupei, Liu, P., Hu, S. G., Liu, Y., Zhang, Qing, Lee, Pooi See
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Ultraviolet light; Synapses
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83557; http://hdl.handle.net/10220/42674

In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the pa...