Silicon carbide based inverters for energy efficiency

• Main Authors: Vu, P. L. A., Rahman, M. A., Maswood, Ali I.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/84656; http://hdl.handle.net/10220/12157
• Institution: Nanyang Technological University

The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters....