Silicon carbide based inverters for energy efficiency

The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters....

Full description

Saved in:
Bibliographic Details
Main Authors: Vu, P. L. A., Rahman, M. A., Maswood, Ali I.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/84656
http://hdl.handle.net/10220/12157
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters. Output characteristics and switching energy loss characteristics based on experimental data are incorporated. Comparison of total power losses and efficiency of a silicon carbide based three phase inverter with silicon base is analyzed and studied. The efficiency of the silicon carbide based inverters based on chosen device is found to be above 99%, and more efficient than most conventional silicon based IGBT inverters. This is most so at high switching frequency.