Silicon carbide based inverters for energy efficiency

• المؤلفون الرئيسيون: Vu, P. L. A., Rahman, M. A., Maswood, Ali I.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84656; http://hdl.handle.net/10220/12157

The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters....