Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires

We analyze a novel antenna effect that resonantly enhances the photocurrent response of end-contacted P–i–N junction nanowire gratings, due to coupling of incident radiation into the grating's multiple-scattering electromagnetic modes. Quantitative characterization of these resonances was perfo...

Full description

Saved in:
Bibliographic Details
Main Authors: Salfi, J., Lin, F. K., Stewart, C., Nair, S. V., Chen, C. Y., Yongshun, S., Rusli, E., Yu, M., Singh, N., Sousa, C. F. d., Ruda, H. E.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/84917
http://hdl.handle.net/10220/17521
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-84917
record_format dspace
spelling sg-ntu-dr.10356-849172020-03-07T13:57:21Z Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires Salfi, J. Lin, F. K. Stewart, C. Nair, S. V. Chen, C. Y. Yongshun, S. Rusli, E. Yu, M. Singh, N. Sousa, C. F. d. Ruda, H. E. School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering We analyze a novel antenna effect that resonantly enhances the photocurrent response of end-contacted P–i–N junction nanowire gratings, due to coupling of incident radiation into the grating's multiple-scattering electromagnetic modes. Quantitative characterization of these resonances was performed by spectral and polarization-resolved photocurrent measurements on gratings with N = 500, 200 and 100 nanowires, aided by electron beam-induced current measurements, and in excellent agreement with electromagnetic scattering theory. Despite the small scattering cross-section of each nanowire, with triangular cross-section (height 8 nm, width 6 nm), the measured quality factor of the resonances Q ≈ 10 exceeds that of the empty SiO2 cavity without degradation for gratings of as few as 100 nanowires. Photoresponse retains sinusoidal polarization anisotropy characteristic of single nanowires. We discuss strategies for improving Q and present a grating design tailoring resonant field enhancement at red, green or blue wavelengths, for three different grating periods of ℓ = 460, 400 and 320 nm. Published Version 2013-11-08T07:31:43Z 2019-12-06T15:53:35Z 2013-11-08T07:31:43Z 2019-12-06T15:53:35Z 2013 2013 Journal Article Salfi, J., Stewart, C., Nair, S. V., Chen, C. Y., Yongshun, S., Rusli, E., et al. (2013). Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires. New Journal of Physics, 15, 093029-. https://hdl.handle.net/10356/84917 http://hdl.handle.net/10220/17521 10.1088/1367-2630/15/9/093029 en New journal of physics © 2013 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Salfi, J.
Lin, F. K.
Stewart, C.
Nair, S. V.
Chen, C. Y.
Yongshun, S.
Rusli, E.
Yu, M.
Singh, N.
Sousa, C. F. d.
Ruda, H. E.
Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires
description We analyze a novel antenna effect that resonantly enhances the photocurrent response of end-contacted P–i–N junction nanowire gratings, due to coupling of incident radiation into the grating's multiple-scattering electromagnetic modes. Quantitative characterization of these resonances was performed by spectral and polarization-resolved photocurrent measurements on gratings with N = 500, 200 and 100 nanowires, aided by electron beam-induced current measurements, and in excellent agreement with electromagnetic scattering theory. Despite the small scattering cross-section of each nanowire, with triangular cross-section (height 8 nm, width 6 nm), the measured quality factor of the resonances Q ≈ 10 exceeds that of the empty SiO2 cavity without degradation for gratings of as few as 100 nanowires. Photoresponse retains sinusoidal polarization anisotropy characteristic of single nanowires. We discuss strategies for improving Q and present a grating design tailoring resonant field enhancement at red, green or blue wavelengths, for three different grating periods of ℓ = 460, 400 and 320 nm.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Salfi, J.
Lin, F. K.
Stewart, C.
Nair, S. V.
Chen, C. Y.
Yongshun, S.
Rusli, E.
Yu, M.
Singh, N.
Sousa, C. F. d.
Ruda, H. E.
format Article
author Salfi, J.
Lin, F. K.
Stewart, C.
Nair, S. V.
Chen, C. Y.
Yongshun, S.
Rusli, E.
Yu, M.
Singh, N.
Sousa, C. F. d.
Ruda, H. E.
author_sort Salfi, J.
title Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires
title_short Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires
title_full Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires
title_fullStr Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires
title_full_unstemmed Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires
title_sort antenna-enhanced and polarization sensitive photoresponse in arrays of silicon p–i–n nanowires
publishDate 2013
url https://hdl.handle.net/10356/84917
http://hdl.handle.net/10220/17521
_version_ 1681047646240768000