On the hole accelerator for III-nitride light-emitting diodes

• Main Authors: Zhang, Zi-Hui, Zhang, Yonghui, Bi, Wengang, Geng, Chong, Xu, Shu, Demir, Hilmi Volkan, Sun, Xiao Wei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Electric fields; Polarization
• Online Access: https://hdl.handle.net/10356/84934; http://hdl.handle.net/10220/40836
• Institution: Nanyang Technological University

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1−xN heterojunction) with different designs, including the AlN co...