On the hole accelerator for III-nitride light-emitting diodes

• المؤلفون الرئيسيون: Zhang, Zi-Hui, Zhang, Yonghui, Bi, Wengang, Geng, Chong, Xu, Shu, Demir, Hilmi Volkan, Sun, Xiao Wei
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Electric fields; Polarization
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84934; http://hdl.handle.net/10220/40836

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1−xN heterojunction) with different designs, including the AlN co...