A charge inverter for III-nitride light-emitting diodes

• Main Authors: Zhang, Zi-Hui, Zhang, Yonghui, Bi, Wengang, Geng, Chong, Xu, Shu, Demir, Hilmi Volkan, Sun, Xiao Wei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Light emitting diodes; Charge injection
• Online Access: https://hdl.handle.net/10356/84936; http://hdl.handle.net/10220/40829
• Institution: Nanyang Technological University

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes(LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is...