A charge inverter for III-nitride light-emitting diodes
In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes(LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is...
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Main Authors: | , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2016
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/84936 http://hdl.handle.net/10220/40829 |
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Institution: | Nanyang Technological University |
Language: | English |
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