Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers

An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except...

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Main Authors: Yang, Xuyong, Ma, Yanyan, Mutlugun, Evren, Zhao, Yongbiao, Leck, Kheng Swee, Tan, Swee Tiam, Demir, Hilmi Volkan, Zhang, Qinyuan, Du, Hejun, Sun, Xiao Wei
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
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Online Access:https://hdl.handle.net/10356/84937
http://hdl.handle.net/10220/40918
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-849372020-03-07T12:31:22Z Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers Yang, Xuyong Ma, Yanyan Mutlugun, Evren Zhao, Yongbiao Leck, Kheng Swee Tan, Swee Tiam Demir, Hilmi Volkan Zhang, Qinyuan Du, Hejun Sun, Xiao Wei School of Electrical and Electronic Engineering School of Mechanical and Aerospace Engineering School of Physical and Mathematical Sciences LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays quantum dot light-emitting diodes An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cdm-2 at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cdA-1 and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) 2016-07-12T07:30:31Z 2019-12-06T15:53:58Z 2016-07-12T07:30:31Z 2019-12-06T15:53:58Z 2013 Journal Article Yang, X., Ma, Y., Mutlugun, E., Zhao, Y., Leck, K. S., Tan, S. T., et al. (2014). Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers. ACS Applied Materials and Interfaces, 6(1), 495-499. 1944-8244 https://hdl.handle.net/10356/84937 http://hdl.handle.net/10220/40918 10.1021/am404540z en ACS Applied Materials and Interfaces © 2013 American Chemical Society.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic quantum dot
light-emitting diodes
spellingShingle quantum dot
light-emitting diodes
Yang, Xuyong
Ma, Yanyan
Mutlugun, Evren
Zhao, Yongbiao
Leck, Kheng Swee
Tan, Swee Tiam
Demir, Hilmi Volkan
Zhang, Qinyuan
Du, Hejun
Sun, Xiao Wei
Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
description An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cdm-2 at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cdA-1 and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yang, Xuyong
Ma, Yanyan
Mutlugun, Evren
Zhao, Yongbiao
Leck, Kheng Swee
Tan, Swee Tiam
Demir, Hilmi Volkan
Zhang, Qinyuan
Du, Hejun
Sun, Xiao Wei
format Article
author Yang, Xuyong
Ma, Yanyan
Mutlugun, Evren
Zhao, Yongbiao
Leck, Kheng Swee
Tan, Swee Tiam
Demir, Hilmi Volkan
Zhang, Qinyuan
Du, Hejun
Sun, Xiao Wei
author_sort Yang, Xuyong
title Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
title_short Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
title_full Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
title_fullStr Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
title_full_unstemmed Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
title_sort stable, efficient, and all-solution-processed quantum dot light-emitting diodes with double-sided metal oxide nanoparticle charge transport layers
publishDate 2016
url https://hdl.handle.net/10356/84937
http://hdl.handle.net/10220/40918
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