Highly efficient domain walls injection in perpendicular magnetic anisotropy nanowire
Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate a...
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Main Authors: | Zhang, Sen Fu, Gan, Wei Liang, Kwon, Jaesuk, Luo, Fei Long, Lim, Gerard Joseph, Wang, J. B., Lew, Wen Siang |
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Other Authors: | School of Physical and Mathematical Sciences |
Format: | Article |
Language: | English |
Published: |
2018
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/85352 http://hdl.handle.net/10220/46676 |
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Institution: | Nanyang Technological University |
Language: | English |
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