Highly efficient domain walls injection in perpendicular magnetic anisotropy nanowire

• Main Authors: Zhang, Sen Fu, Gan, Wei Liang, Kwon, Jaesuk, Luo, Fei Long, Lim, Gerard Joseph, Wang, J. B., Lew, Wen Siang
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2018
• Subjects: Domain Walls; Nanowire; DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/85352; http://hdl.handle.net/10220/46676
• Institution: Nanyang Technological University

Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate a...