Efficient generation of an array of single silicon-vacancy defects in silicon carbide

• المؤلفون الرئيسيون: Wang, Junfeng, Zhou, Yu, Zhang, Xiaoming, Liu, Fucai, Li, Yan, Li, Ke, Liu, Zheng, Wang, Guanzhong, Gao, Weibo
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Hybrid Quantum Systems; Semiconductor Compounds
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85853; http://hdl.handle.net/10220/45375

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vac...