Efficient generation of an array of single silicon-vacancy defects in silicon carbide

• Main Authors: Wang, Junfeng, Zhou, Yu, Zhang, Xiaoming, Liu, Fucai, Li, Yan, Li, Ke, Liu, Zheng, Wang, Guanzhong, Gao, Weibo
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Hybrid Quantum Systems; Semiconductor Compounds
• Online Access: https://hdl.handle.net/10356/85853; http://hdl.handle.net/10220/45375
• Institution: Nanyang Technological University

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vac...