Efficient generation of an array of single silicon-vacancy defects in silicon carbide
Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vac...
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Main Authors: | , , , , , , , , |
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格式: | Article |
語言: | English |
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2018
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在線閱讀: | https://hdl.handle.net/10356/85853 http://hdl.handle.net/10220/45375 |
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