Efficient generation of an array of single silicon-vacancy defects in silicon carbide

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vac...

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Main Authors: Wang, Junfeng, Zhou, Yu, Zhang, Xiaoming, Liu, Fucai, Li, Yan, Li, Ke, Liu, Zheng, Wang, Guanzhong, Gao, Weibo
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2018
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在線閱讀:https://hdl.handle.net/10356/85853
http://hdl.handle.net/10220/45375
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