Impact of voltage-accelerated stress on hole trapping at operating condition

• المؤلفون الرئيسيون: Tung, Zhi Yan, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Bias-temperature Instability; Random Telegraphic Noise
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/86843; http://hdl.handle.net/10220/45201

This letter shows that voltage-accelerated stressing (VAS), a common methodology used in gate-oxide reliability testing, can change the capture activity of a time-zero oxide trap (i.e., already active under operating condition). It is found that after VAS, a time-zero oxide trap can be rendered eith...