Gated electric field control on multi-layered structures with perpendicular magnetic anisotropy

The ability to control the properties of ferro-metallic materials after device fabrication is a highly desirable feature for fundamental studies and technological advancements. In semiconductor-based devices, electric field control using a gate voltage to vary the conductivity is well established in...

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書目詳細資料
主要作者: Tan, Funan
其他作者: Lew Wen Siang
格式: Thesis-Doctor of Philosophy
語言:English
出版: Nanyang Technological University 2019
主題:
在線閱讀:https://hdl.handle.net/10356/87731
http://hdl.handle.net/10220/50464
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