Gated electric field control on multi-layered structures with perpendicular magnetic anisotropy

The ability to control the properties of ferro-metallic materials after device fabrication is a highly desirable feature for fundamental studies and technological advancements. In semiconductor-based devices, electric field control using a gate voltage to vary the conductivity is well established in...

Full description

Saved in:
Bibliographic Details
Main Author: Tan, Funan
Other Authors: Lew Wen Siang
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2019
Subjects:
Online Access:https://hdl.handle.net/10356/87731
http://hdl.handle.net/10220/50464
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English