High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes

High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes

In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measu...

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Bibliographic Details
Main Authors: Meng, Qianqian, Wang, Hong, Liu, Chongyang, Guo, Xin, Gao, Jianjun, Ang, Kian Siong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
High Speed
Dipole-doped Structure
Online Access:https://hdl.handle.net/10356/87770
http://hdl.handle.net/10220/45511
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz.

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