Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes
PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3–1.6 μm). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in nea...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2018
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/87973 http://hdl.handle.net/10220/45590 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-87973 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-879732023-02-28T19:29:13Z Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes Yang, Xuyong Ren, Fuqiang Wang, Yue Ding, Tao Sun, Handong Ma, Dongling Sun, Xia Wei School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Quantum Dots Light-emitting Diode PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3–1.6 μm). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in near-infrared (NIR) emitting device performance are still necessary for the widespread use and commercialization of NIR emitting QLED technology. Here, we report a high-performance 1.51-μm emitting QLED with inverted organic–inorganic hybrid device architecture and PbS/CdS core-shell structured quantum dots as emitter. The resultant QLEDs show a record device performance for the QLEDs in 1.5 μm emission window, with a maximum radiance of 6.04 Wsr−1 m−2 and peak external quantum efficiency (EQE) of 4.12%, respectively. Published version 2018-08-17T06:21:19Z 2019-12-06T16:53:17Z 2018-08-17T06:21:19Z 2019-12-06T16:53:17Z 2017 Journal Article Yang, X., Ren, F., Wang, Y., Ding, T., Sun, H., Ma, D., et al. (2017). Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes. Scientific Reports, 7(1), 14741-. 2045-2322 https://hdl.handle.net/10356/87973 http://hdl.handle.net/10220/45590 10.1038/s41598-017-15244-5 en Scientific Reports © 2017 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. 6 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
Quantum Dots Light-emitting Diode |
| spellingShingle |
Quantum Dots Light-emitting Diode Yang, Xuyong Ren, Fuqiang Wang, Yue Ding, Tao Sun, Handong Ma, Dongling Sun, Xia Wei Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes |
| description |
PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3–1.6 μm). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in near-infrared (NIR) emitting device performance are still necessary for the widespread use and commercialization of NIR emitting QLED technology. Here, we report a high-performance 1.51-μm emitting QLED with inverted organic–inorganic hybrid device architecture and PbS/CdS core-shell structured quantum dots as emitter. The resultant QLEDs show a record device performance for the QLEDs in 1.5 μm emission window, with a maximum radiance of 6.04 Wsr−1 m−2 and peak external quantum efficiency (EQE) of 4.12%, respectively. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Yang, Xuyong Ren, Fuqiang Wang, Yue Ding, Tao Sun, Handong Ma, Dongling Sun, Xia Wei |
| format |
Article |
| author |
Yang, Xuyong Ren, Fuqiang Wang, Yue Ding, Tao Sun, Handong Ma, Dongling Sun, Xia Wei |
| author_sort |
Yang, Xuyong |
| title |
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes |
| title_short |
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes |
| title_full |
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes |
| title_fullStr |
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes |
| title_full_unstemmed |
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes |
| title_sort |
iodide capped pbs/cds core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes |
| publishDate |
2018 |
| url |
https://hdl.handle.net/10356/87973 http://hdl.handle.net/10220/45590 |
| _version_ |
1759857728252018688 |