A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

• المؤلفون الرئيسيون: Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Apparent Mean Free Path; Apparent Mobility
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88179; http://hdl.handle.net/10220/44601

The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that wer...