Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser

• المؤلفون الرئيسيون: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Zhang, Yu, Xu, Yingqiang, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Diode Lasers; Mode-locked Laser
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88342; http://hdl.handle.net/10220/44607

A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 μm is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at ~18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mo...