Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector

• المؤلفون الرئيسيون: Tobing, Landobasa Yosef Mario, Tong, Jinchao, Qiu, Shupeng, Zhang, Dao Hua, Unil Perera, A. G.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Photodetectors; Middle Wavelength Infrared; DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88527; http://hdl.handle.net/10220/47609
• المؤسسة: Nanyang Technological University

Middle wavelength infrared (MWIR) photodetectors have a wide range of applications, but almost all of them operate at low temperature due to the limit of materials and device structures. The capability of plasmonic structures to localize electromagnetic wave on the deep subwavelength scale provides...