Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

• Main Authors: Lee, Kwang Hong, Bao, Shuyu, Wang, Yue, Fitzgerald, Eugene A., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Fourier Transform Infrared Spectroscopy; Silicon Oxide Films
• Online Access: https://hdl.handle.net/10356/89088; http://hdl.handle.net/10220/47657
• Institution: Nanyang Technological University

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydr...