Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces

Chalcogenides—alloys based on group-16 ‘chalcogen’ elements (sulfur, selenium, and tellurium) covalently bound to ‘network formers’ such as arsenic, germanium, antimony, and gallium—have a variety of technologically useful properties, including infrared transparency, high optical nonlinearity, photo...

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Main Authors: Gholipour, Behrad, Karvounis, Artemios, Yin, Jun, Soci, Cesare, MacDonald, Kevin F., Zheludev, Nikolay I.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2018
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Online Access:https://hdl.handle.net/10356/89237
http://hdl.handle.net/10220/46139
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-892372023-02-28T19:35:56Z Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces Gholipour, Behrad Karvounis, Artemios Yin, Jun Soci, Cesare MacDonald, Kevin F. Zheludev, Nikolay I. School of Physical and Mathematical Sciences Centre for Disruptive Photonic Technologies (CDPT) The Photonics Institute Chalcogenide DRNTU::Science::Physics Plasmonics Chalcogenides—alloys based on group-16 ‘chalcogen’ elements (sulfur, selenium, and tellurium) covalently bound to ‘network formers’ such as arsenic, germanium, antimony, and gallium—have a variety of technologically useful properties, including infrared transparency, high optical nonlinearity, photorefractivity and readily induced, reversible, non-volatile structural phase switching. Such phase-change materials are of enormous interest in the fields of plasmonics and nanophotonics. However, in such applications, the fact that some chalcogenides accrue plasmonic properties in the transition from an amorphous to a crystalline state, i.e., the real part of their relative permittivity becomes negative, has gone somewhat unnoticed. Indeed, one of the most commercially important chalcogenide compounds, germanium antimony telluride (Ge2:Sb2:Te5 or GST), which is widely used in rewritable optical and electronic data storage technologies, presents this behavior at wavelengths in the near-ultraviolet to visible spectral range. In this work, we show that the phase transition-induced emergence of plasmonic properties in the crystalline state can markedly change the optical properties of sub-wavelength-thickness, nanostructured GST films, allowing for the realization of non-volatile, reconfigurable (e.g., color-tunable) chalcogenide metasurfaces operating at visible frequencies and creating opportunities for developments in non-volatile optical memory, solid state displays and all-optical switching devices. MOE (Min. of Education, S’pore) Published version 2018-10-01T03:12:12Z 2019-12-06T17:20:54Z 2018-10-01T03:12:12Z 2019-12-06T17:20:54Z 2018 Journal Article Gholipour, B., Karvounis, A., Yin, J., Soci, C., MacDonald, K. F., & Zheludev, N. I. (2018). Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces. NPG Asia Materials, 10(6), 533-539. doi:10.1038/s41427-018-0043-4 https://hdl.handle.net/10356/89237 http://hdl.handle.net/10220/46139 10.1038/s41427-018-0043-4 en NPG Asia Materials © 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. 7 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Chalcogenide
DRNTU::Science::Physics
Plasmonics
spellingShingle Chalcogenide
DRNTU::Science::Physics
Plasmonics
Gholipour, Behrad
Karvounis, Artemios
Yin, Jun
Soci, Cesare
MacDonald, Kevin F.
Zheludev, Nikolay I.
Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
description Chalcogenides—alloys based on group-16 ‘chalcogen’ elements (sulfur, selenium, and tellurium) covalently bound to ‘network formers’ such as arsenic, germanium, antimony, and gallium—have a variety of technologically useful properties, including infrared transparency, high optical nonlinearity, photorefractivity and readily induced, reversible, non-volatile structural phase switching. Such phase-change materials are of enormous interest in the fields of plasmonics and nanophotonics. However, in such applications, the fact that some chalcogenides accrue plasmonic properties in the transition from an amorphous to a crystalline state, i.e., the real part of their relative permittivity becomes negative, has gone somewhat unnoticed. Indeed, one of the most commercially important chalcogenide compounds, germanium antimony telluride (Ge2:Sb2:Te5 or GST), which is widely used in rewritable optical and electronic data storage technologies, presents this behavior at wavelengths in the near-ultraviolet to visible spectral range. In this work, we show that the phase transition-induced emergence of plasmonic properties in the crystalline state can markedly change the optical properties of sub-wavelength-thickness, nanostructured GST films, allowing for the realization of non-volatile, reconfigurable (e.g., color-tunable) chalcogenide metasurfaces operating at visible frequencies and creating opportunities for developments in non-volatile optical memory, solid state displays and all-optical switching devices.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Gholipour, Behrad
Karvounis, Artemios
Yin, Jun
Soci, Cesare
MacDonald, Kevin F.
Zheludev, Nikolay I.
format Article
author Gholipour, Behrad
Karvounis, Artemios
Yin, Jun
Soci, Cesare
MacDonald, Kevin F.
Zheludev, Nikolay I.
author_sort Gholipour, Behrad
title Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
title_short Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
title_full Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
title_fullStr Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
title_full_unstemmed Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
title_sort phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
publishDate 2018
url https://hdl.handle.net/10356/89237
http://hdl.handle.net/10220/46139
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