Silicon wafer microstructure imaging using InfraRed Transport of Intensity Equation

Silicon wafer microstructure imaging using InfraRed Transport of Intensity Equation

A novel quantitative 3D imaging system of silicon microstructures using InfraRed Transport of Intensity Equation (IRTIE) is proposed in this paper. By recording the intensity at multiple planes and using FFT or DCT based TIE solver, fast and accurate phase retrieval for both uniform and non-uniform...

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Bibliographic Details
Main Authors: Li, Hongru, Feng, Guoying, Bourgade, Thomas, Zuo, Chao, Du, Yongzhao, Zhou, Shouhuan, Asundi, Anand
Other Authors: Quan, Chenggen
Format: Conference or Workshop Item
Language:English
Published: 2018
Subjects:
Infrared Imaging
Phase Retrieval
DRNTU::Engineering::Mechanical engineering
Online Access:https://hdl.handle.net/10356/89429
http://hdl.handle.net/10220/47087
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Institution: Nanyang Technological University
Language: English
Description
Summary:A novel quantitative 3D imaging system of silicon microstructures using InfraRed Transport of Intensity Equation (IRTIE) is proposed in this paper. By recording the intensity at multiple planes and using FFT or DCT based TIE solver, fast and accurate phase retrieval for both uniform and non-uniform intensity distributions is proposed. Numerical simulation and experiments confirm the accuracy and reliability of the proposed method. The application of IR-TIE for inspection of micro-patterns in visibly opaque media using 1310 nm light source is demonstrated. For comparison, micro-patterns are also inspected by the contact scanning mode Taylor Hobson system. Quantitative agreement suggests the possibility of using IR-TIE for phase imaging of silicon wafers.

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