Low-threshold optically pumped lasing in highly strained germanium nanowires

• المؤلفون الرئيسيون: Bao, Shuyu, Kim, Daeik, Onwukaeme, Chibuzo, Gupta, Shashank, Saraswat, Krishna, Lee, Kwang Hong, Kim, Yeji, Min, Dabin, Jung, Yongduck, Qiu, Haodong, Wang, Hong, Fitzgerald, Eugene A., Tan, Chuan Seng, Nam, Donguk
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Nanoparticle; Transmission Electron Microscopy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/89496; http://hdl.handle.net/10220/44966
• المؤسسة: Nanyang Technological University

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their u...