A novel germanium-on-silicon nitride platform for Mid-IR sensing
In recent years, the wavelength range over which silicon photonics can operate has been extended to the mid-infrared (IR) regions (2 to 20 μm). Since many molecules and substances have their specific absorption peaks in the Mid-IR range, this has provided us with a good opportunity to use silicon...
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| Main Author: | |
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| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90129 http://hdl.handle.net/10220/48387 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In recent years, the wavelength range over which silicon photonics can operate has
been extended to the mid-infrared (IR) regions (2 to 20 μm). Since many molecules and
substances have their specific absorption peaks in the Mid-IR range, this has provided
us with a good opportunity to use silicon photonic device as a sensor to trace elements
of chemicals in either gas, liquid or solid phases. In addition, Mid-IR also has many
potential applications in free space data communication, IR imaging of biological
tissues, spectroscopy and many others. |
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