Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy

• Main Authors: Sun, Handong, Calvez, Stephane, Clark, Antony H., Dawson, M. D., Qiu, Y. N., Rorison, J. M., Kim, K. S., Kim, T., Park, Y. J.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Science::Physics::Optics and light
• Online Access: https://hdl.handle.net/10356/90456; http://hdl.handle.net/10220/6051; http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=86&issue=9&spage=092106&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Spectroscopic%20characterization%20of%201%2E3%20%26mu%3Bm%20GaInNAs%20quantum%2Dwell%20structures%20grown%20by%20metal%2Dorganic%20vapor%20phase%20epitaxy%2E&sici.
• Institution: Nanyang Technological University

We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation sPLEd spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.