Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing

• Main Authors: Macaluso, Roberto, Sun, Handong, Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., Riechert, H.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Science::Physics::Optics and light
• Online Access: https://hdl.handle.net/10356/90457; http://hdl.handle.net/10220/6046; http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2003&volume=82&issue=24&spage=4259&epage=&aulast=Macaluso&aufirst=%20R&auinit=&title=Applied%20Physics%20Letters&atitle=Selective%20modification%20of%20band%20gap%20in%20GaInNAs%2FGaAs%20structures%20by%20quantum%2Dwell%20intermixing%2E&sici.
• Institution: Nanyang Technological University

We report an investigation of selective quantum-well intermixing (QWI) in 1.3-mum GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sp...