Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-mum GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sp...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90457 http://hdl.handle.net/10220/6046 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2003&volume=82&issue=24&spage=4259&epage=&aulast=Macaluso&aufirst=%20R&auinit=&title=Applied%20Physics%20Letters&atitle=Selective%20modification%20of%20band%20gap%20in%20GaInNAs%2FGaAs%20structures%20by%20quantum%2Dwell%20intermixing%2E&sici. |
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| Institution: | Nanyang Technological University |
| Language: | English |