Built-in electric field enhancement/retardation on intermixing

• المؤلفون الرئيسيون: Xu, C. D., Chin, Mee Koy, Mei, Ting, Dong, Jian Rong, Chua, Soo Jin
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90694; http://hdl.handle.net/10220/6417

The built-in electric field may impose a drift on charged point defects and may thus enhance or retard the intermixing during annealing. Electric field is built-in near the surface due to the pinning of surface Fermi level after argon plasma treatment on InP surfaces of InP/InGaAs quantum well sampl...