CMOS T/R switch design : towards ultra-wideband and higher frequency
This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design a...
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Main Authors: | , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2009
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/91145 http://hdl.handle.net/10220/4646 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for
minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-floating technique is proposed and its effects are discussed. A differential switch architecture without
shunt arms is designed and verified by experimental results.
Fabricated in 0.13- m triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to
20 GHz. With resistive body floating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point (P1dB) is obtained up to
20 GHz in only 0.03 mm2 active die area. |
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