CMOS T/R switch design : towards ultra-wideband and higher frequency

This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design a...

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Main Authors: Li, Qiang, Zhang, Yue Ping
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
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Online Access:https://hdl.handle.net/10356/91145
http://hdl.handle.net/10220/4646
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-911452020-03-07T13:57:27Z CMOS T/R switch design : towards ultra-wideband and higher frequency Li, Qiang Zhang, Yue Ping School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-floating technique is proposed and its effects are discussed. A differential switch architecture without shunt arms is designed and verified by experimental results. Fabricated in 0.13- m triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to 20 GHz. With resistive body floating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point (P1dB) is obtained up to 20 GHz in only 0.03 mm2 active die area. Published version 2009-06-22T08:49:47Z 2019-12-06T18:00:32Z 2009-06-22T08:49:47Z 2019-12-06T18:00:32Z 2007 2007 Journal Article Li, Q., & Zhang, Y. P. (2007). CMOS T/R switch design : towards ultra-wideband and higher frequency. IEEE Journal of Solid-State Circuits, 42(3), 563-570. 0018-9200 https://hdl.handle.net/10356/91145 http://hdl.handle.net/10220/4646 10.1109/JSSC.2006.891442 en IEEE journal of solid-state circuits © 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 8 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Li, Qiang
Zhang, Yue Ping
CMOS T/R switch design : towards ultra-wideband and higher frequency
description This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-floating technique is proposed and its effects are discussed. A differential switch architecture without shunt arms is designed and verified by experimental results. Fabricated in 0.13- m triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to 20 GHz. With resistive body floating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point (P1dB) is obtained up to 20 GHz in only 0.03 mm2 active die area.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Li, Qiang
Zhang, Yue Ping
format Article
author Li, Qiang
Zhang, Yue Ping
author_sort Li, Qiang
title CMOS T/R switch design : towards ultra-wideband and higher frequency
title_short CMOS T/R switch design : towards ultra-wideband and higher frequency
title_full CMOS T/R switch design : towards ultra-wideband and higher frequency
title_fullStr CMOS T/R switch design : towards ultra-wideband and higher frequency
title_full_unstemmed CMOS T/R switch design : towards ultra-wideband and higher frequency
title_sort cmos t/r switch design : towards ultra-wideband and higher frequency
publishDate 2009
url https://hdl.handle.net/10356/91145
http://hdl.handle.net/10220/4646
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