A full current-mode sense amplifier for low-power SRAM applications
A full current-mode sense amplifier is presented. It extensively utilizes the cross-coupled inverters for both local and global sensing stages, hence achieving ultra low-power and ultra high-speed properties simultaneously. Its sensing delay and...
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sg-ntu-dr.10356-913262020-03-07T13:24:46Z A full current-mode sense amplifier for low-power SRAM applications Do, Anh Tuan Low, Jeremy Yung Shern Kong, Zhi Hui Yeo, Kiat Seng Low, Joshua Yung Lih School of Electrical and Electronic Engineering IEEE Asia Pacific Conference on Circuits and Systems (2008 : Macau) DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits A full current-mode sense amplifier is presented. It extensively utilizes the cross-coupled inverters for both local and global sensing stages, hence achieving ultra low-power and ultra high-speed properties simultaneously. Its sensing delay and power consumption are almost independent of the bit- and dataline capacitances. Extensive pre-layout simulation results based on a 1.8 V/0.18 μm CMOS technology from Chartered Semiconductor Manufacturing Ltd. (CHRT) have verified that the new SA outperforms the best published designs with 64% and 45% speed and power consumption improvements respectively. Furthermore, the new design can operate down to a supply voltage of 1 V. These attributes of the proposed SA make it judiciously appropriate for the use in the contemporary highcomplexity systems, which continually crave for low-power and high-speed characteristics. Published version 2010-08-30T04:08:14Z 2019-12-06T18:03:40Z 2010-08-30T04:08:14Z 2019-12-06T18:03:40Z 2008 2008 Conference Paper Do, A. T., Low, J. Y. S., Kong, Z. H., Yeo, K. S., & Low, J. Y. L. (2008). A full current-mode sense amplifier for low-power SRAM applications. In proceedings of the 9th IEEE Asia Pacific Conference on Circuits and Systems: Macau, China, (pp.1402-1405) https://hdl.handle.net/10356/91326 http://hdl.handle.net/10220/6361 10.1109/APCCAS.2008.4746292 en © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Do, Anh Tuan Low, Jeremy Yung Shern Kong, Zhi Hui Yeo, Kiat Seng Low, Joshua Yung Lih A full current-mode sense amplifier for low-power SRAM applications |
description |
A full current-mode sense amplifier is presented. It
extensively utilizes the cross-coupled inverters for both local and
global sensing stages, hence achieving ultra low-power and ultra
high-speed properties simultaneously. Its sensing delay and
power consumption are almost independent of the bit- and dataline
capacitances. Extensive pre-layout simulation results based
on a 1.8 V/0.18 μm CMOS technology from Chartered
Semiconductor Manufacturing Ltd. (CHRT) have verified that
the new SA outperforms the best published designs with 64% and
45% speed and power consumption improvements respectively.
Furthermore, the new design can operate down to a supply
voltage of 1 V. These attributes of the proposed SA make it
judiciously appropriate for the use in the contemporary highcomplexity
systems, which continually crave for low-power and
high-speed characteristics. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Do, Anh Tuan Low, Jeremy Yung Shern Kong, Zhi Hui Yeo, Kiat Seng Low, Joshua Yung Lih |
format |
Conference or Workshop Item |
author |
Do, Anh Tuan Low, Jeremy Yung Shern Kong, Zhi Hui Yeo, Kiat Seng Low, Joshua Yung Lih |
author_sort |
Do, Anh Tuan |
title |
A full current-mode sense amplifier for low-power SRAM applications |
title_short |
A full current-mode sense amplifier for low-power SRAM applications |
title_full |
A full current-mode sense amplifier for low-power SRAM applications |
title_fullStr |
A full current-mode sense amplifier for low-power SRAM applications |
title_full_unstemmed |
A full current-mode sense amplifier for low-power SRAM applications |
title_sort |
full current-mode sense amplifier for low-power sram applications |
publishDate |
2010 |
url |
https://hdl.handle.net/10356/91326 http://hdl.handle.net/10220/6361 |
_version_ |
1681035802702774272 |