RFCMOS unit width optimization technique

• المؤلفون الرئيسيون: Tong, Ah Fatt, Lim, Wei Meng, Sia, Choon Beng, Yeo, Kiat Seng, Teng, Zee Long, Ng, Pei Fern
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91416; http://hdl.handle.net/10220/4657

In this paper, we demonstrate a unit width (Wf) optimization technique based on their unity short-circuit current gain frequency (ft), unilateral power gain frequency (f MAX), and high-frequency (HF) noise for RFCMOS transistors. Our results show that the trend for the above figures-of-merit (FOMs)...