Oxygen vacancy motion in Er-doped barium strontium titanate thin films

• Main Authors: Wang, Junling, Trolier-McKinstry, Susan
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/91506; http://hdl.handle.net/10220/6916
• Institution: Nanyang Technological University

Amphoteric dopants are widely used in BaTiO3-based dielectrics to improve capacitor reliability. In this work, an analogous approach was explored for barium strontium titanate thin films. Ba0.7Sr0.3TiO3 thin films were prepared by chemical solution deposition. Er was used as a dopant t...