A low-power 16×16-b parallel multiplier utilizing pass-transistor logic

This paper describes a low-power 16x16-b parallel very large scale integration multiplier, designed and fabricated using a 0.8- m double-metal double-poly BiCMOS process. In order to achieve low-power operation, the multiplier was designed utilizing mainly pass-transistor (PT) logic circuits. The in...

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Bibliographic Details
Main Authors: Law, C. F., Rofail, Samir S., Yeo, Kiat Seng
Format: Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/91516
http://hdl.handle.net/10220/6009
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Institution: Nanyang Technological University
Language: English
Description
Summary:This paper describes a low-power 16x16-b parallel very large scale integration multiplier, designed and fabricated using a 0.8- m double-metal double-poly BiCMOS process. In order to achieve low-power operation, the multiplier was designed utilizing mainly pass-transistor (PT) logic circuits. The inherent nonfull-swing nature of PT logic circuits were taken full advantage of, without significantly compromising the speed performance of the overall circuit implementation. New circuit implementations for the partial-product generator and the partial-product addition circuitry have been proposed, simulated, and fabricated. Experimental results showed that the worst case multiplication time of the test chip is 10.4 ns at a supply voltage of 3.3 V, and the average power dissipation is 38 mW at a frequency of 10 MHz.