Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment

Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment

The effective channel length L-eff and total external series resistance R-TOTEXT of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. The accuracy of the device threshold voltage used in the L-eff...

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Bibliographic Details
Main Authors: Seah, Lionel Siau Hing, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/91517
http://hdl.handle.net/10220/4708
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Institution: Nanyang Technological University
Language: English
Description
Summary:The effective channel length L-eff and total external series resistance R-TOTEXT of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. The accuracy of the device threshold voltage used in the L-eff and R-TOTEXT extraction routine is discussed. The proposed models have been verified for temperature ranging from 223 K to 398 K and source-to-body voltage V(sb) ≥ 0 V conditions.

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