A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure

• Main Authors: Rofail, Samir S., Chew, Kok Wai Johnny, Yeo, Kiat Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/91614; http://hdl.handle.net/10220/4664
• Institution: Nanyang Technological University

A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process wafers with a wide range of technologies (0.25–1.0µm). The measurements have be...