A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure

• المؤلفون الرئيسيون: Rofail, Samir S., Chew, Kok Wai Johnny, Yeo, Kiat Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91614; http://hdl.handle.net/10220/4664
• المؤسسة: Nanyang Technological University

A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process wafers with a wide range of technologies (0.25–1.0µm). The measurements have be...