3D circuit model for 3D IC reliability study

3D integrated circuit technology is an emerging technology for the near future, and has received tremendous attention in the semiconductor community. With the 3D integrated circuit, the temperature and thermo-mechanical stress in the various parts of the IC are highly dependent on the surrounding ma...

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Main Authors: Tan, Cher Ming, He, Feifei
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2010
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Online Access:https://hdl.handle.net/10356/91727
http://hdl.handle.net/10220/6292
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-917272020-03-07T13:24:46Z 3D circuit model for 3D IC reliability study Tan, Cher Ming He, Feifei School of Electrical and Electronic Engineering IEEE International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems (10th : 2009 : Delft, The Netherlands) DRNTU::Engineering::Electrical and electronic engineering 3D integrated circuit technology is an emerging technology for the near future, and has received tremendous attention in the semiconductor community. With the 3D integrated circuit, the temperature and thermo-mechanical stress in the various parts of the IC are highly dependent on the surrounding materials and their materials properties, including their thermal conductivities, thermal expansivities, Young modulus, poisson ratio etc. Also, the architectural of the 3D IC will also affect the current density, temperature and thermomechanical stress distributions in the IC. In view of the above-mentioned, the electricalthermal- mechanical modeling of integrated circuit can no longer be done with a simple 2D model. The distributions of the current density, temperature and stress are important in determining the reliability of an IC. In this work we demonstrate a method of converting 2D circuit layo~t into a 3D model. Simulations under real circuit operating condition are carried out using both Cadence (a circuit simulator) and ANSYS (finite element tool). Limiting our study to the electromigration failure, we compute the current density, temperature and stress distributions of the interconnect layers by considering the heat transfer and Joule heating, and the "weak spot" for electromigration is identified. Layout design can be modified based on the simulation results so as to enhance the 3D circuit interconnect reliability. Published version 2010-06-04T08:14:27Z 2019-12-06T18:10:55Z 2010-06-04T08:14:27Z 2019-12-06T18:10:55Z 2009 2009 Conference Paper Tan, C. M., & He, F. (2009). 3D circuit model for 3D IC reliability study. International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems(10th:2009:Delft, The Netherlands) https://hdl.handle.net/10356/91727 http://hdl.handle.net/10220/6292 10.1109/ESIME.2009.4938513 en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 7 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Tan, Cher Ming
He, Feifei
3D circuit model for 3D IC reliability study
description 3D integrated circuit technology is an emerging technology for the near future, and has received tremendous attention in the semiconductor community. With the 3D integrated circuit, the temperature and thermo-mechanical stress in the various parts of the IC are highly dependent on the surrounding materials and their materials properties, including their thermal conductivities, thermal expansivities, Young modulus, poisson ratio etc. Also, the architectural of the 3D IC will also affect the current density, temperature and thermomechanical stress distributions in the IC. In view of the above-mentioned, the electricalthermal- mechanical modeling of integrated circuit can no longer be done with a simple 2D model. The distributions of the current density, temperature and stress are important in determining the reliability of an IC. In this work we demonstrate a method of converting 2D circuit layo~t into a 3D model. Simulations under real circuit operating condition are carried out using both Cadence (a circuit simulator) and ANSYS (finite element tool). Limiting our study to the electromigration failure, we compute the current density, temperature and stress distributions of the interconnect layers by considering the heat transfer and Joule heating, and the "weak spot" for electromigration is identified. Layout design can be modified based on the simulation results so as to enhance the 3D circuit interconnect reliability.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tan, Cher Ming
He, Feifei
format Conference or Workshop Item
author Tan, Cher Ming
He, Feifei
author_sort Tan, Cher Ming
title 3D circuit model for 3D IC reliability study
title_short 3D circuit model for 3D IC reliability study
title_full 3D circuit model for 3D IC reliability study
title_fullStr 3D circuit model for 3D IC reliability study
title_full_unstemmed 3D circuit model for 3D IC reliability study
title_sort 3d circuit model for 3d ic reliability study
publishDate 2010
url https://hdl.handle.net/10356/91727
http://hdl.handle.net/10220/6292
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